參數(shù)資料
型號: W9425G6EH-6
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 INCH, ROHS COMPLIANT, TSOP2-66
文件頁數(shù): 22/54頁
文件大小: 0K
代理商: W9425G6EH-6
W9425G6EH
Publication Release Date:Dec. 03, 2008
- 29 -
Revision A08
V SWING (MAX)
VDDQ
VSS
T
VIH min (AC)
VREF
VIL max (AC)
SLEW = (VIHmin (AC) - VILmax (AC)) / T
Output
50 Ω
VTT
Timing Reference Load
Output
V(out)
30pF
Notes:
(1)
Conditions outside the limits listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
(2)
All voltages are referenced to VSS, VSSQ.( 2.6V
±0.1V for DDR500)
(3)
Peak to peak AC noise on VREF may not exceed
±2% VREF(DC).
(4)
VOH = 1.95V, VOL = 0.35V
(5)
VOH = 1.9V, VOL = 0.4V
(6)
The values of IOH(DC) is based on VDDQ = 2.3V and VTT = 1.19V.
The values of IOL(DC) is based on VDDQ = 2.3V and VTT = 1.11V.
(7)
These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values
of tCK and tRC.
(8)
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors is expected to be set
equal to VREF and must track variations in the DC level of VREF.
(9)
These parameters depend on the output loading. Specified values are obtained with the output open.
(10) Transition times are measured between VIH min(AC) and VIL max(AC).Transition (rise and fall) of input signals have a fixed
slope.
(11) IF the result of nominal calculation with regard to tCK contains more than one decimal place, the result is rounded up to
the nearest decimal place.
(i.e., tDQSS = 0.75
× tCK, tCK = 7.5 nS, 0.75 × 7.5 nS = 5.625 nS is rounded up to 5.6 nS.)
(12) VX is the differential clock cross point voltage where input timing measurement is referenced.
(13) VID is magnitude of the difference between CLK input level and CLK input level.
(14) VISO means {VICK(CLK)+VICK( CLK )}/2.
(15) Refer to the figure below.
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