參數(shù)資料
型號: W963B6BBN70E
廠商: WINBOND ELECTRONICS CORP
元件分類: SRAM
英文描述: 512K X 16 PSEUDO STATIC RAM, 65 ns, PBGA48
封裝: 6 X 8 MM, 0.75 MM PITCH, TFBGA-48
文件頁數(shù): 3/29頁
文件大?。?/td> 948K
代理商: W963B6BBN70E
W963B6BBN
AC Characteristics, Continued
Write Operation
-70
-80
PARAMETER
SYM.
Min.
Max.
Min.
Max.
UNIT
NOTES
Write Cycle Time
tWC
70
-
80
-
nS
*1
Address Setup Time
tAS
0
-
0
-
nS
*2
Address Hold Time
tAH
35
-
40
-
nS
*2
CE1 Write Setup Time
tCS
0
1000
0
1000
nS
CE1 Write Hold Time
tCH
0
1000
0
1000
nS
WE
Setup Time
tWS
0
-
0
-
nS
WE
Hold Time
tWH
0
-
0
-
nS
LB
and UB Setup Time
tBS
-5
-
-5
-
nS
LB
and UB Hold Time
tBH
-5
-
-5
-
nS
OE
Setup Time
tOES
0
1000
0
1000
nS
*3
tOEH
30
1000
35
1000
nS
*3, *4
OE
Hold Time
tOEH[ABS]
12
-
15
-
nS
*5
OE
High to CE1 Low Setup Time
tOHCL
-5
-
-5
-
nS
*6
OE
High to Address Hold Time
tOHAH
-5
-
-5
-
nS
*7
CE1 Write Pulse Width
tCW
45
-
50
-
nS
*1, *8
WE
Write Pulse Width
TWP
45
-
50
-
nS
*1, *8
CE1 Write Recovery Time
tWRC
10
-
15
-
nS
*1, *9
WE
Write Recovery Time
tWR
10
1000
15
1000
nS
*1, *3, *9
Data Setup Time
tDS
15
-
20
-
nS
Data Hold Time
tDH
0
-
0
-
nS
CE1 High Pulse Width
tCP
12
-
15
-
nS
*9
Publication Release Date: March 11, 2003
- 11 -
Revision A1
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