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參數(shù)資料
| 型號： | W9712G8JB-3 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | DDR DRAM, PBGA60 |
| 封裝： | 8 X 12.50 MM, ROHS COMPLIANT, WBGA-60 |
| 文件頁數(shù)： | 22/86頁 |
| 文件大小： | 1039K |
| 代理商： | W9712G8JB-3 |
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W9712G8JB
Publication Release Date: Oct. 12, 2010
- 29 -
Revision A01
Table 5 – Precharge & Auto-precharge clarifications
From
Command
To Command
Minimum Delay between “From
Command” to “To Command”
Unit
Notes
Read
Precharge (to same Bank as Read)
AL + BL/2 + max(RTP, 2) - 2
clks
1, 2
Precharge All
AL + BL/2 + max(RTP, 2) - 2
clks
1, 2
Read w/AP
Precharge (to same Bank as Read w/AP)
AL + BL/2 + max(RTP, 2) - 2
clks
1, 2
Precharge All
AL + BL/2 + max(RTP, 2) - 2
clks
1, 2
Write
Precharge (to same Bank as Write)
WL + BL/2 + tWR
clks
2
Precharge All
WL + BL/2 + tWR
clks
2
Write w/AP
Precharge (to same Bank as Write w/AP)
WL + BL/2 + WR
clks
2
Precharge All
WL + BL/2 + WR
clks
2
Precharge
Precharge (to same Bank as Precharge)
1
clks
2
Precharge All
1
clks
2
Precharge
All
Precharge
1
clks
2
Precharge All
1
clks
2
Notes:
1. RTP[cycles] = RU{ tRTP[nS] / tCK(avg)[nS] }, where RU stands for round up.
2. For a given bank, the precharge period should be counted from the latest precharge command, either one bank precharge or
precharge all, issued to that bank. The precharge period is satisfied after tRP depending on the latest precharge command
issued to that bank.
7.8 Refresh Operation
Two types of Refresh operation can be performed on the device: Auto Refresh and Self Refresh. By
repeating the Auto Refresh cycle, each bank in turn refreshed automatically. The Refresh operation
must be performed 4096 times (rows) within 64mS. The period between the Auto Refresh command
and the next command is specified by tRFC.
Self Refresh mode enters issuing the Self Refresh command (CKE asserted "LOW") while all banks
are in the idle state. The device is in Self Refresh mode for as long as CKE held "LOW". In the case of
4096 burst Auto Refresh commands, 4096 burst Auto Refresh commands must be performed within
15.6 S before entering and after exiting the Self Refresh mode. In the case of distributed Auto
Refresh commands, distributed auto refresh commands must be issued every 15.6 S and the last
distributed Auto Refresh commands must be performed within 15.6 S before entering the self refresh
mode. After exiting from the Self Refresh mode, the refresh operation must be performed within 15.6
S. In Self Refresh mode, all input/output buffers are disable, resulting in lower power dissipation
(except CKE buffer). (Example timing waveform refer to 10.29 Self Refresh diagram in Chapter 10)
7.9 Power Down Mode
Power-down is synchronously entered when CKE is registered LOW, along with NOP or Deselect
command. CKE is not allowed to go LOW while mode register or extended mode register command
time, or read or write operation is in progress. CKE is allowed to go LOW while any other operation
such as row activation, Precharge or Auto-precharge or Auto Refresh is in progress, but power down
IDD specification will not be applied until finishing those operations.
The DLL should be in a locked state when power-down is entered. Otherwise DLL should be reset
after exiting power-down mode for proper read operation.
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| W9751G8JB-18 | DDR DRAM, PBGA84 |
| W9812G21H-6I | 4M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W971GG6JB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 8 BANKS ? 16 BIT DDR2 SDRAM |
| W971GG6JB-18 | 制造商:Winbond Electronics Corp 功能描述:1GB DDR2 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 1GBIT 1.875NS |
| W971GG6JB-25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:64MBX16 DDR2 制造商:Winbond 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA |
| W971GG6JB25I | 功能描述:IC DDR2 SDRAM 1GBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
| W971GG6JB-25I | 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY |
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