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參數(shù)資料
| 型號： | W9712G8JB-3 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | DDR DRAM, PBGA60 |
| 封裝： | 8 X 12.50 MM, ROHS COMPLIANT, WBGA-60 |
| 文件頁數(shù)： | 67/86頁 |
| 文件大?。?/td> | 1039K |
| 代理商： | W9712G8JB-3 |
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W9712G8JB
Publication Release Date: Oct. 12, 2010
- 7 -
Revision A01
5. BALL DESCRIPTION
BALL NUMBER
SYMBOL
FUNCTION
DESCRIPTION
H8,H3,H7,J2,J8,J3,
J7,K2,K8,K3,H2,K7,
L2
A0A12
Address
Provide the row address for active commands, and the column
address and Auto-precharge bit for Read/Write commands to select
one location out of the memory array in the respective bank.
Row address: A0A11. (A12 for MRS/EMRS setting only)
Column address: A0A9. (A10 is used for Auto-precharge)
G2,G3
BA0BA1
Bank Select
BA0BA1 define to which bank an Active, Read, Write or Precharge
command is being applied. Bank address also determines if the
mode register or one of the extended mode registers is to be
accessed during a MRS or EMRS command cycle.
C8,C2,D7,D3,D1,D9,
B1,B9
DQ0DQ7
Data Input
/ Output
Bi-directional data bus.
F9
ODT
On Die Termination
Control
ODT (registered HIGH) enables termination resistance internal to the
DDR2 SDRAM.
B7,A8
DQS, DQS
Data Strobe /
Differential Read
Data Strobe
Output with read data, input with write data for source synchronous
operation. Edge-aligned with read data, center-aligned with write
data. DQS is only used when differential data strobe mode is
enabled via the control bit at EMR (1) [A10] = 0.
G8
CS
Chip Select
All
commands
are
masked
when
CS
is
registered
HIGH
. CS provides for external Rank selection on systems with
multiple Ranks. CS is considered part of the command code.
F7,G7,F3
RAS , CAS ,
WE
Command Inputs
RAS , CAS and WE (along with CS ) define the command being
entered.
B3
DM/RDQS
Input Data Mask/
Read Data Strobe
DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH coincident with that input data during a Write
access. DM is sampled on both edges of DQS. Although DM is input
only, the DM loading matches the DQ and DQS loading. When
RDQS is enabled, RDQS is output with read data only and is ignored
during write data. RDQS is enabled by EMR (1) [A11] = 1. If RDQS is
enabled, the DM function is disabled.
A2
NU/ RDQS
Not Use/Differential
Read Data Strobe
RDQS is only used when RDQS is enabled and differential data
strobe mode is enabled. If differential data strobe mode is disabled
via the control bit at EMR (1) [A10] = 1, then ball A2 and A8 are not
used.
E8,F8
CLK, CLK
Differential Clock
Inputs
CLK and CLK are differential clock inputs. All address and control
input signals are sampled on the crossing of the positive edge of CLK
and negative edge of CLK . Output (read) data is referenced to the
crossings of CLK and CLK (both directions of crossing).
F2
CKE
Clock Enable
CKE (registered HIGH) activates and CKE (registered LOW)
deactivates clocking circuitry on the DDR2 SDRAM.
E2
VREF
Reference Voltage
VREF is reference voltage for inputs.
A1,E9,H9,L1
VDD
Power Supply
Power Supply: 1.8V
±0.1V.
A3,E3,J1,K9
VSS
Ground
Ground.
A9,C1,C3,C7,C9
VDDQ
DQ Power Supply
DQ Power Supply: 1.8V
±0.1V.
A7,B2,B8,D2,D8
VSSQ
DQ Ground
DQ Ground. Isolated on the device for improved noise immunity.
G1,L3,L7,L8
NC
No Connection
No connection.
E1
VDDL
DLL Power Supply
DLL Power Supply: 1.8V
±0.1V.
E7
VSSDL
DLL Ground
DLL Ground.
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相關代理商/技術參數(shù) |
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| W971GG6JB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 8 BANKS ? 16 BIT DDR2 SDRAM |
| W971GG6JB-18 | 制造商:Winbond Electronics Corp 功能描述:1GB DDR2 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 1GBIT 1.875NS |
| W971GG6JB-25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:64MBX16 DDR2 制造商:Winbond 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA |
| W971GG6JB25I | 功能描述:IC DDR2 SDRAM 1GBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
| W971GG6JB-25I | 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY |
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