參數(shù)資料
型號： X28C513JIZ-15
廠商： INTERSIL CORP
元件分類： DRAM
英文描述： 5V, Byte Alterable EEPROM
中文描述： 64K X 8 EEPROM 5V, 150 ns, PQCC32
封裝： ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32
文件頁數(shù)： 11/21頁
文件大小： 473K
代理商： X28C513JIZ-15
11
FN8106.2
June 7, 2006
NOTE:
2. This parameter is periodically sampled and not 100% tested.
Absolute Maximum Ratings
Recommended Operating Conditions
Temperature under bias
X28C512, X28C513 . . . . . . . . . . . . . . . . . . . . . . . .-10°C to +85°C
X28C512I/513I . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C
X28C512M/513M . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C
Storage temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Voltage on any pin with respect to V
SS
. . . . . . . . . . . . . . -1V to +7V
D.C. output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Lead temperature (soldering, 10s). . . . . . . . . . . . . . . . . . . . . .300°C
Temperature Range
Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Military . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Supply Voltage Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5V ±10%
CAUTION: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional
operation of the device (at these or any other conditions above those listed in the operational sections of this specification) is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
DC Electrical Specifications
Over recommended operating conditions, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
I
CC
V
CC
current (active) (TTL inputs)
CE = OE = V
IL
, WE = V
IH
, All I/O’s = open, address
inputs = 0.4V/2.4V Levels @ f = 5MHz
50
mA
I
SB1
V
CC
current (standby) (TTL inputs)
CE = V
IH
, OE = VIL, All I/O’s = open, other inputs = V
IH
3
mA
I
SB2
V
CC
current (standby) (CMOS inputs)
CE = V
CC
- 0.3V, OE = VIL, All I/O’s = Open, Other Inputs
= V
IH
500
μA
I
LI
Input leakage current
V
IN
= V
SS
to V
CC
10
μA
I
LO
Output leakage current
V
OUT
= V
SS
to V
CC
, CE = V
IH
10
μA
V
lL
(Note 1)
Input LOW voltage
-1
0.8
V
V
IH
(Note 1)
Input HIGH voltage
2
V
CC
+ 1
V
V
OL
Output LOW voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output HIGH voltage
I
OH
= -400μA
2.4
V
NOTE:
1. V
IL
min. and V
IH
max. are for reference only and are not tested.
Power-Up Timing
SYMBOL
PARAMETER
MAX
UNIT
t
PUR
(Note 2)
Power-up to read operation
100
μs
t
PUW
(Note 2)
Power-up to write operation
5
ms
Capacitance
T
A
= +25°C, f = 1MHz, V
CC
= 5V
SYMBOL
PARAMETER
TEST CONDITIONS
MAX
UNIT
C
I/O
(Note 2)
Input/output capacitance
V
I/O
= 0V
10
pF
C
IN
(Note 2)
Input capacitance
V
IN
= 0V
10
pF
Endurance and Data Retention
PARAMETER
MIN
MAX
UNIT
Endurance
10,000
Cycles per byte
Endurance
100,000
Cycles per page
Data retention
100
Years
X28C512, X28C513
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