參數(shù)資料
型號: XP134A01A9SR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: Power MOS FET
中文描述: 功率MOS場效應(yīng)管
文件頁數(shù): 1/4頁
文件大?。?/td> 67K
代理商: XP134A01A9SR
u
8
D1
1
S1
5
D2
4
G2
6
D2
3
S2
7
D1
2
G1
N
P-Channel Power MOS FET
N
DMOS Structure
N
Low On-State Resistance: 0.19
MAX
N
Ultra High-Speed Switching
N
SOP-8 Package
N
Two FET Devices built-in
I
Applications
G
Notebook PCs
G
Cellular and portable phones
G
On-board power supplies
G
Li-ion battery systems
I
General Description
The XP134A01A9SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
I
Features
Low on-state resistance:
Rds(on)=0.12
(Vgs=-10V)
Rds(on)=0.19
(Vgs=-4.5V)
Ultra high-speed switching
Operational Voltage:
-4.5V
High density mounting:
SOP-8
I
Absolute Maximum Ratings
I
Equivalent Circuit
I
Pin Configuration
P-Channel MOS FET
(2 devices built-in)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
When implemented on a glass epoxy PCB
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
-30
±
20
-3.5
-10
-3.5
2
150
-55~150
V
V
A
A
A
W
C
C
SYMBOL
RATINGS
UNITS
I
Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
S1
S2
G1
Source
Source
Gate
4
7~8
5~6
G2
D1
D2
Gate
Drain
Drain
8
1
5
4
6
3
7
2
SOP-8
(TOP VIEW)
Ta=25C
Note:
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