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參數(shù)資料
| 型號(hào)： | XP151A13A0MR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOS FET |
| 中文描述： | 功率MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | XP151A13A0MR |
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Electrical Characteristics
DC characteristics
Ta=25
°
C
UNITS
μ
A
μ
A
V
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
SYMBOL
Idss
Igss
Vgs (off )
CONDITIONS
Vds = 20 , Vgs = 0V
Vgs =
±
8 , Vds = 0V
Id = 1mA , Vds = 10V
Id = 0.5A , Vgs = 4.5V
Id = 0.5A , Vgs = 2.5V
Id = 0.1A , Vgs = 1.5V
MIN
TYP
MAX
10
±
10
1.2
0.1
0.14
0.25
0.5
0.075
0.1
0.17
Drain-Source On-state Resistance
(note)
Rds ( on )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
Dynamic characteristics
Ta=25
°
C
UNITS
pF
pF
pF
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
MIN
TYP
220
120
45
MAX
Vds = 10V , Vgs = 0V
f = 1 MHz
Switching characteristics
Ta=25
°
C
UNITS
ns
ns
ns
ns
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
CONDITIONS
MIN
TYP
10
15
75
65
MAX
Vgs = 5V , Id = 0.5A
Vdd = 10V
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
SYMBOL
CONDITIONS
Implement on a ceramic
PCB
MIN
TYP
MAX
UNITS
°
C / W
250
Rth ( ch - a )
Vf
If = 1A , Vgs = 0V
V
0.8
1.1
Id = 0.5A , Vds = 10V
| Yfs |
S
4.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP151A13A0MR_1 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP151A13A0MR_12 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP151A13A0MR-G | 制造商:Torex Semiconductor LTD 功能描述: |
| XP151A13A0MRN | 制造商:Torex Semiconductor LTD 功能描述: |
| XP151A13COMR | 制造商:HTSEMI 制造商全稱:Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:20 V N-Channel Enhancement Mode MOSFET |
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