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參數(shù)資料
| 型號： | XR-85 |
| 廠商： | Shanghai Sunrise Electronics Co., LTD. |
| 英文描述： | SILICON EPITAXIAL PLANAR SWITCHING DIODE |
| 中文描述： | 硅外延平面開關(guān)二極管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 12K |
| 代理商： | XR-85 |
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
XR-85
SILICON EPITAXIAL
PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 20V
FEATURES
Small glass structure ensures high reliability
Low leakage
High temperature soldering guaranteed:
250
o
C/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Glass,hermetically sealed
Polarity: Color band denotes cathode
Mounting position: Any
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25
o
C ambient temperature unless otherwise specified)
SYMBOL
VALUE
UNITS
Reverse Voltage
V
R
20
V
Peak Reverse Voltage
Forward Current (average)
Forward Voltage (I
F
=10mA)
Reverse Current (V
R
=20V)
Reverse Current (V
R
=20V,T
J
=100
o
C)
Capacitance
Forward Differential Resistor (I
F
=10mA, f=100MHz)
Thermal Resistance
(junction to ambient)
Operating Junction and Storage Temperature Range
Notes:
1: V
R
=10V, f=1 MHz
2: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
V
RM
I
O
V
F
I
R1
I
R2
C
t
r
F
35
100
1
100
10
1.5
0.6
V
mA
V
nA
μ
A
pF
(Note 1)
(Note 2)
T
STG,
T
J
-55 ~ +150
o
C
http://www.sse-diode.com
FORWARD CURRENT: 100mA
RATINGS
R
θ
(ja)
0.35
o
C/mW
TECHNICAL
SPECIFICATION
DO - 34
Dimensions in inches and (millimeters)
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