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參數(shù)資料
| 型號： | ZXTP2008G |
| 廠商： | Zetex Semiconductor |
| 英文描述： | 30V PNP LOW SATURATION TRANSISTOR IN SOT223 |
| 中文描述： | 30V的進步黨低飽和晶體管采用SOT223 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 111K |
| 代理商： | ZXTP2008G |
ZXTP2008G
ISSUE 1 - J UNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
-50
-70
V
I
C
= -100 A
I
C
= -1 A, RB < 1k
I
C
= -10mA *
I
E
= -100 A
V
CB
= -40V
V
CB
= -40V, T
amb
= 100°C
V
CB
= -40V
V
CB
= -40V, T
amb
= 100°C
V
EB
= -6V
I
C
= -0.5A, I
B
= -20mA *
I
C
= -1A, I
B
= -100mA *
I
C
= -1A, I
B
= -20mA *
I
C
= -2A, I
B
= -200mA *
I
C
= -5.5A, I
B
= -500mA *
Collector-emitter breakdown voltage
-50
-70
V
Collector-emitter breakdown voltage
-30
-40
V
Emitter-base breakdown voltage
-7.0
-8.0
V
Collector cut-off current
<1
-20
-0.5
nA
A
Collector cut-off current
I
CER
R < 1k
<1
-20
-0.5
nA
A
Emitter cut-off current
I
EBO
V
CE(S AT)
<1
-10
nA
Collector-emitter saturation voltage
-30
-40
-60
-70
-170
-45
-60
-85
-90
-210
mV
mV
mV
mV
mV
Base-emitter saturation voltage
V
BE(S AT)
V
BE(ON)
h
FE
-1030
-1130
mV
I
C
= -5.5A, I
B
= -500mA *
I
C
= -5.5A, V
CE
= -1V *
I
C
= -10mA, V
CE
= -1V *
I
C
= -1A, V
CE
= -1V *
I
C
= -5A, V
CE
= -1V *
I
C
= -20A, V
CE
= -1V *
I
C
= -100mA, V
CE
= -10V
f = 50MHz
Base-emitter turn-on voltage
-900
-1000
mV
Static forward current transfer ratio
100
100
70
10
225
200
145
20
300
Transition frequency
f
T
110
Output capacitance
C
OBO
t
ON
t
OFF
83
pF
V
CB
= -10V, f = 1MHz *
I
C
= -1A, V
CC
= -10V,
I
B1
= I
B2
= -100mA
Switching times
43
230
ns
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| ZXTP2008GTA | 功能描述:兩極晶體管 - BJT 30V PNP Low Sat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZXTP2008GTC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V PNP LOW SATURATION TRANSISTOR IN SOT223 |
| ZXTP2008Z | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 |
| ZXTP2008ZTA | 功能描述:兩極晶體管 - BJT 30V PNP Low Sat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZXTP2009Z | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR |
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