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參數(shù)資料
| 型號(hào)： | ZXTP2008G |
| 廠商： | Zetex Semiconductor |
| 英文描述： | 30V PNP LOW SATURATION TRANSISTOR IN SOT223 |
| 中文描述： | 30V的進(jìn)步黨低飽和晶體管采用SOT223 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | ZXTP2008G |
ZXTP2008G
6
ISSUE 1 - J UNE 2005
Europe
Zetex GmbH
Streitfeldstrae 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may notbe used, applied orreproduced
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
Zetex Semiconductors plc 2005
PACKAGE OUTLINE
PAD LAYOUT DETAILS
DIM
Millimeters
Inches
DIM
Millimeters
Inches
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
PACKAGE DIMENSIONS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXTP2008GTA | 功能描述:兩極晶體管 - BJT 30V PNP Low Sat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZXTP2008GTC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V PNP LOW SATURATION TRANSISTOR IN SOT223 |
| ZXTP2008Z | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 |
| ZXTP2008ZTA | 功能描述:兩極晶體管 - BJT 30V PNP Low Sat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZXTP2009Z | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR |
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