參數(shù)資料
型號: μPD29F008L
廠商: NEC Corp.
英文描述: 8 M-Bit CMOS 3.0 V-Only Flash Memory(8M CMOS 3V工作電壓的閃存)
中文描述: 8 m位的CMOS 3.0 V型只有閃存(800萬的CMOS 3V的工作電壓的閃存)
文件頁數(shù): 1/32頁
文件大小: 172K
代理商: ΜPD29F008L
The information in this document is subject to change without notice.
MOS INTEGRATED CIRCUIT
P
PD29F008L
8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY
1 M-WORD BY 8-BIT (BYTE MODE)
PRELIMINARY DATA SHEET
Document No. M12309EJ2V0DS00 (2nd edition)
Date Published September 1997 N
Printed in Japan
1997
The mark shows major revised points.
Description
The
P
PD29F008L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608-
bit configuration. It possesses an automatic single Byte program function and an automatic block erase function that
are effected by command register input.
This memory consists of 19 blocks: one protection block (16 K byte), two condition blocks (8 K byte by 2 blocks),
and sixteen main blocks (32 K byte by 1 block, 64 K byte by 15 blocks).
The
P
PD29F008L comes in two types: the type T with the protection block located at the top address and the type
B with the protection block located at the bottom address.
The
P
PD29F008L is packed in 40-pin TSOP (I) (10
u
20 mm).
Features
1,048,576 words by 8 bit
Two types of protection block locations
type T : protection block at the top address
type B : protection block at the bottom address
Fast access time : 120, 150 ns (MAX.)
Fast program/erase time.
Program: 9
P
s (TYP.)
Block erase
Protection block : 1.0 s (TYP.)
Condition block : 1.0 s (TYP.)
Main block
: 1.0 s (TYP.)
Command register input
Automatic program function
Hardware reset
Ready (/Busy) output (RY (/BY))
Data polling and toggle bit
Automatic erase function
Functions for automatic erasure:
Erase suspend and resume functions
Minimum number of repetitions for program/erase:
100,000 times
Directly drive TTL or CMOS
Low power dissipation
Reset mode
: 5.0
P
A (MAX.)
Standby mode
:
5.0
P
A (MAX.)
Operating mode : 35 mA (MAX.)
Voltage range
V
CC
: 3.0 V + 20 %/-10 % (Extend voltage)
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