參數(shù)資料
型號(hào): μPD29F008L
廠商: NEC Corp.
英文描述: 8 M-Bit CMOS 3.0 V-Only Flash Memory(8M CMOS 3V工作電壓的閃存)
中文描述: 8 m位的CMOS 3.0 V型只有閃存(800萬(wàn)的CMOS 3V的工作電壓的閃存)
文件頁(yè)數(shù): 19/32頁(yè)
文件大?。?/td> 172K
代理商: ΜPD29F008L
Preliminary Data Sheet
19
P
PD29F008L
AC Characteristics (1) (/WE Control) (Recommended operating conditions unless otherwise noted)
P
PD29F008L-B12
P
PD29F008L-B15
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Cycle time
t
CW1
120
150
ns
Address setup time 1
t
AS1
0
0
ns
Address hold time 1
t
AH1
50
65
ns
Data input setup time 1
t
DS1
50
65
ns
Data input hold time 1
t
DH1
0
0
ns
/OE setup time
t
OES
0
0
ns
/OE hold time
Read
t
OEH
0
0
ns
Toggle and /DATA polling
10
10
ns
Read recovery time before write
t
OEHC
0
0
ns
/CE setup time
t
CES
0
0
ns
/CE hold time (V
IL
)
t
CEL
0
0
ns
Write pulse width
t
WEP
50
65
ns
/WE hold time
t
WEH
30
35
ns
Total program time
t
APT
9
9
P
s
Total erase time
t
AETB
1
1
s
V
CC
setup time
t
VCS
50
50
P
s
Write Recovery time from RY (/BY)
t
RB
0
0
ns
/RESET low time
t
RL
500
500
ns
/RESET high time before read
t
PRHH
50
50
ns
/RESET to sleep time
t
SLP
20
20
P
s
Program/Erase valid to RY (/BY) delay
t
BUSY
90
90
ns
Remark
Duration of the program or erase operation is variable and is calculated in the internal algorthms.
Parameter
Symbol
Unit
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