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參數資料
| 型號： | 2032VE |
| 廠商： | Lattice Semiconductor Corporation |
| 英文描述： | 3.3V In-System Programmable High Density SuperFAST⑩ PLD |
| 中文描述： | 3.3在系統(tǒng)可編程高密度PLD的超快⑩ |
| 文件頁數： | 3/14頁 |
| 文件大?。?/td> | 179K |
| 代理商： | 2032VE |
Specifications
ispLSI 2032VE
3
Absolute Maximum Ratings
1
Supply Voltage V
cc
.................................. -0.5 to +5.4V
Input Voltage Applied............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature..............................-65 to +150
°
C
Case Temp. with Power Applied .............. -55 to 125
°
C
Max. Junction Temp. (T
J
) with Power Applied ... 150
°
C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
C
C
C
SYMBOL
Table 2-0006/2032VE
PARAMETER
I/O Capacitance
Clock Capacitance
6
10
UNITS
pf
TYPICAL
8
TEST CONDITIONS
V = 3.3V, V = 0.0V
1
2
Dedicated Input Capacitance
pf
pf
V = 3.3V, V = 0.0V
V = 3.3V, V = 0.0V
3
T
A
= 0
°
C to + 70
°
C
T
A
= -40
°
C to + 85
°
C
SYMBOL
Table 2-0005/2032VE
V
CC
V
IH
V
IL
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
MIN.
MAX.
UNITS
3.0
3.0
2.0
V
–
0.5
3.6
3.6
5.25
0.8
V
V
V
V
Commercial
Industrial
Erase Reprogram Specifications
Table 2-0008A/2032VE
PARAMETER
MINIMUM
10,000
MAXIMUM
–
UNITS
Cycles
Erase/Reprogram Cycles
Capacitance (T
A
=25
°
C, f=1.0 MHz)
DC Recommended Operating Condition
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