參數(shù)資料
型號: 2032VE
廠商: Lattice Semiconductor Corporation
英文描述: 3.3V In-System Programmable High Density SuperFAST⑩ PLD
中文描述: 3.3在系統(tǒng)可編程高密度PLD的超快⑩
文件頁數(shù): 4/14頁
文件大?。?/td> 179K
代理商: 2032VE
Specifications
ispLSI 2032VE
4
Switching Test Conditions
Input Pulse Levels
Table 2-0003/2032VE
Input Rise and Fall Time
10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
1.5V
1.5V
See Figure 2
3-state levels are measured 0.5V from
steady-state active level.
1.5 ns
Output Load Conditions (see Figure 2)
DC Electrical Characteristics
Over Recommended Operating Conditions
Figure 2. Test Load
+ 3.3V
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
0213A/2032VE
TEST CONDITION
R1
316
316
R2
348
348
348
CL
35pF
35pF
35pF
A
B
Active High
Active Low
Active High to Z
at
V
OH
C
316
348
5pF
348
5pF
Active Low to Z
at
V
+0.5V
OL
Table 2-0004A/2032VE
V
OL
V
OH
I
IL
SYMBOL
1. One output at a time for a maximum duration of one second. V = 0.5V was selected to avoid test problems
by tester ground degradation. Characterized but not 100% tested.
2. Measured using two 16-bit counters.
3. Typical values are at V = 3.3V and T = 25
°
C.
4. Maximum I varies widely with specific device configuration and operating frequency. Refer to Power Consumption section
of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate
maximum I .
5. Unused inputs at V = 0V.
Table 2-0007/2032VE
1
I
IH
I
IL-isp
I
IL-PU
I
OS
I
CC
PARAMETER
2, 4, 5
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
BSCAN
Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I = -4 mA
0V
V
V (Max.)
IN
(V - 0.2)V
V
V
V
V
5.25V
0V
V
V
0V
V
V
V = 3.3V, V = 0.5V
V = 0.0V, V = 3.0V
f = 1 MHz
IN
IL
IN
IL
CONDITION
MIN.
2.4
TYP.
MAX.
0.4
-10
UNITS
V
V
μ
A
3
80
-300/-225
10
10
-150
-150
-100
μ
A
μ
A
μ
A
μ
A
mA
mA
Others
mA
65
CC
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