參數(shù)資料
型號(hào): 2096VE
廠商: Lattice Semiconductor Corporation
英文描述: 3.3V In-System Programmable SuperFAST⑩ High Density PLD
中文描述: 3.3在系統(tǒng)可編程超快⑩高密度可編程邏輯器件
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 160K
代理商: 2096VE
Specifications
ispLSI 2096VE
3
Absolute Maximum Ratings
1
Supply Voltage V
cc
.................................. -0.5 to +5.4V
Input Voltage Applied............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature................................ -65 to 150
°
C
Case Temp. with Power Applied .............. -55 to 125
°
C
Max. Junction Temp. (T
J
) with Power Applied ... 150
°
C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
Table 2-0008/2096VE
PARAMETER
MINIMUM
10000
MAXIMUM
UNITS
Cycles
Erase/Reprogram Cycles
C
C
C
SYMBOL
Table 2-0006/2096VE
PARAMETER
I/O Capacitance
Clock and Global Output Enable Capacitance
6
10
UNITS
pf
TYPICAL
8
TEST CONDITIONS
V = 3.3V, V = 0.0V
1
2
Dedicated Input Capacitance
pf
pf
V = 3.3V, V = 0.0V
V = 3.3V, V = 0.0V
3
T
A
= 0
°
C to + 70
°
C
T
A
= -40
°
C to + 85
°
C
SYMBOL
Table 2-0005/2096VE
V
CC
V
IH
V
IL
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
MIN.
MAX.
UNITS
3.0
3.0
2.0
V
0.5
3.6
3.6
5.25
0.8
V
V
V
V
Commercial
Industrial
DC Recommended Operating Condition
Capacitance (T
A
=25
°
C, f=1.0 MHz)
Erase Reprogram Specifications
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