參數(shù)資料
型號(hào)： 27N120BN
廠商： Fairchild Semiconductor Corporation
英文描述： 72A, 1200V, NPT Series N-Channel IGBT
中文描述： 第72A，1200伏，不擴(kuò)散核武器條約系列N溝道IGBT的
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 153K
代理商： 27N120BN
200
4
Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C
2
HGTG27N120BN / HGT5A27N120BN
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG27N120BN
1200
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 3) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
72
34
216
±
20
±
30
A
A
A
V
V
150A at 1200V
500
4.0
135
-55 to 150
260
8
15
W
W/
o
C
mJ
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by Max junction temperature.
2. I
CE
= 30A, L = 400
μ
H, T
J
= 125
o
C
3. V
CE(PK)
= 960V, T
J
= 125
o
C, R
G
= 3
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
I
C
= 250
μ
A, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= 1200V
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
BV
ECS
I
CES
1200
-
-
V
Emitter to Collector Breakdown Voltage
15
-
-
V
Collector to Emitter Leakage Current
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
250
μ
A
μ
A
mA
-
300
-
-
-
4
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 27A,
V
GE
= 15V
-
2.45
2.7
V
-
3.8
4.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
GES
SSOA
I
C
= 250
μ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 3
,
V
GE
= 15V,
L = 200
μ
H, V
CE(PK)
= 1200V
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= 27A,
V
CE
= 600V
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 27A,
V
CE
= 960V,
V
GE
= 15V,
R
G
= 3
,
L = 1mH,
Test Circuit (Figure 18)
6
6.6
-
V
Gate to Emitter Leakage Current
-
-
±
250
-
nA
Switching SOA
150
-
A
Gate to Emitter Plateau Voltage
V
GEP
Q
G(ON)
-
9.2
-
V
On-State Gate Charge
V
GE
= 15V
V
GE
= 20V
-
270
325
nC
-
350
420
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
-
24
30
ns
Current Rise Time
-
20
25
ns
Current Turn-Off Delay Time
-
195
240
ns
Current Fall Time
-
80
120
ns
Turn-On Energy (Note 5)
-
2.2
-
mJ
Turn-On Energy (Note 5)
-
2.7
3.3
mJ
Turn-Off Energy (Note 4)
-
2.3
2.8
mJ
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