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| 型號(hào)： | 27N120BN |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 72A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 第72A，1200伏，不擴(kuò)散核武器條約系列N溝道IGBT的 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | 27N120BN |
200
4
Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C
2
HGTG27N120BN / HGT5A27N120BN
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
20
40
60
6
8
10
120
100
80
140
T
C
= 25
o
C
T
C
= -55
o
C
250
μ
s PULSE TEST
DUTY CYCLE <0.5%, V
GE
= 12V
T
C
= 150
o
C
T
C
= -55
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
80
120
160
0
2
4
6
8
10
40
DUTY CYCLE <0.5%, V
GE
= 15V
250
μ
s PULSE TEST
200
T
C
= 25
o
C
T
C
= 150
o
C
0
E
O
,
12.5
7.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10.0
5.0
2.5
20
10
30
25
15
5
15.0
35
40
45
0
50
55
60
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
25
15
10
20
30
5
1
3
2
4
5
6
40
35
45
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
55
50
60
T
J
= 25
o
C, V
GE
= 12V OR 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
10
5
15
25
15
20
25
30
35
20
40
30
40
35
45
55
50
60
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
R
G
= 3
, L = 1mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
10
0
10
50
40
20
30
5
30
25
20
15
45
40
35
60
60
55
50
70
80
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
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