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| 型號(hào)： | 27N120BN |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 72A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 第72A，1200伏，不擴(kuò)散核武器條約系列N溝道IGBT的 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 153K |
| 代理商： | 27N120BN |
200
4
Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C
2
HGTG27N120BN / HGT5A27N120BN
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
15
30
5
250
25
20
150
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
45
40
35
400
300
350
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
60
55
50
R
G
= 3
, L = 1mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
15
30
5
0
100
150
25
20
50
200
250
45
40
35
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
60
55
50
I
C
,
0
50
100
150
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
200
250
300
14
15
350
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
250
μ
s PULSE TEST
DUTY CYCLE <0.5%, V
CE
= 20V
V
G
,
Q
G
, GATE CHARGE (nC)
14
4
16
2
6
0
0
250
100
50
300
150
V
CE
= 400V
V
CE
= 800V
I
G(REF)
= 2mA, R
L
= 22.2
, T
C
= 25
o
C
V
CE
= 1200V
8
10
12
200
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
2
C
C
IES
C
OES
4
6
8
10
FREQUENCY = 1MHz
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
30
35
0
0.5
1.0
0
1.5
2.0
4.5
5
40
DUTY CYCLE <0.5%, T
C
= 110
o
C
250
μ
s PULSE TEST
25
15
20
2.5
3.0
3.5
4.0
V
GE
= 15V
V
GE
= 10V
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