參數(shù)資料
型號: 28F008C3
廠商: Intel Corp.
英文描述: 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述: 3伏高級啟動塊8 - ,16 - ,32 - Mbit閃存家庭
文件頁數(shù): 30/49頁
文件大?。?/td> 408K
代理商: 28F008C3
SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
E
30
PRELIMINARY
5.1
DC Characteristics: V
CCQ
= 2.7V
–3.6V
Table 10. DC Characteristics
Sym
Parameter
Notes
V
CC
= 2.7V
–3.6V
Unit
Test Conditions
Typ
Max
I
LI
Input Load Current
1
± 1.0
μA
V
CC
= V
CC
Max = V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max = V
CCQ
Max
V
IN
= V
CCQ
or GND
I
LO
Output Leakage Current
1
± 10
μA
I
CCS
V
CC
Standby Current
1,7
20
50
μA
CMOS INPUTS
V
CC
= V
CC
Max = V
CCQ
Max
CE# = RP# = V
CCQ
CMOS INPUTS
V
CC
= V
CC
Max = V
CCQ
Max
V
IN
= V
CCQ
or GND
RP# = GND ± 0.2V
CMOS INPUTS
V
CC
= V
CC
Max = V
CCQ
Max
OE# = V
IH
, CE# =V
IL
f = 5 MHz,
I
OUT
= 0 mA
Inputs = V
IL
or V
IH
I
CCD
V
CC
Deep Power-Down
Current
1,7
1
10
μA
I
CCR
V
CC
Read Current
1,5,7
10
20
mA
I
CCW
V
CC
Program Current
1,4,7
8
20
mA
V
PP
= V
PPH1
(3V)
Program in Progress
8
20
mA
V
PP
= V
PPH2
(12V)
Program in Progress
I
CCE
V
CC
Erase Current
1,4,7
8
20
mA
V
PP
= V
PPH1
(3V)
Erase in Progress
8
20
mA
V
PP
= V
PPH2
(12V)
Erase in Progress
I
CCES
V
CC
Erase Suspend
Current
1,2,4,7
20
50
μA
CE# = V
Erase Suspend in Progress
I
CCWS
V
CC
Program Suspend
Current
1,2,4,7
20
50
μA
CE# = V
IH
Program Suspend in Progress
I
PPD
V
PP
Deep Power-Down
Current
1
0.2
5
μA
RP# = GND ± 0.2V
I
PPR
V
PP
Read Current
1
2
±50
μA
V
PP
V
CC
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