參數(shù)資料
型號(hào): 28F016XS
廠商: Intel Corp.
英文描述: 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲(chǔ)器)
中文描述: 16兆位同步閃存(1,600位同步閃速存儲(chǔ)器)
文件頁數(shù): 27/54頁
文件大小: 830K
代理商: 28F016XS
E
5.4
V
CC
= 3.3V ± 5%, T
A
= 0°C to +70°C
3/5# = Pin Set High for 3.3V Operations
28F016XS FLASH MEMORY
27
DC Characteristics
Symbol
I
LI
Parameter
Input Load Current
Notes
1
Min
Typ
Max
±
1
Units
μA
Test Conditions
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
V
CC
= V
CC
Max
V
OUT
= V
CC
or GND
V
CC
= V
CC
Max
CE
0
#, CE
1
#, RP# = V
CC
±
0.2V
BYTE#, WP#, 3/5# = V
CC
±
0.2V or GND ± 0.2V
V
CC
= V
CC
Max
CE
0
#, CE
1
#, RP# = V
IH
BYTE#, WP#, 3/5# = V
IH
or
V
IL
RP# = GND
±
0.2V
BYTE# = V
CC
± 0.2V or
GND ± 0.2V
V
CC
= V
CC
Max
CMOS: CE
0
# ,CE
1
# = GND
± 0.2V, BYTE# = GND ±
0.2V or V
CC
± 0.2V,
Inputs = GND ± 0.2V or
V
CC
± 0.2V
4-Location Access
Sequence: 3-1-1-1
(clocks)
f = 25 MHz, I
OUT
= 0 mA
V
CC
= V
CC
Max
CMOS: CE
0
#, CE
1
# = GND
± 0.2V, BYTE# = GND ±
0.2V or V
CC
± 0.2V,
Inputs = GND ± 0.2V or
V
CC
± 0.2V
4-Location Access
Sequence: 3-1-1-1
(clocks)
f = 16 MHz, I
OUT
= 0 mA
I
LO
Output Leakage
Current
1
±
10
μA
I
CCS
V
CC
Standby
Current
1,5
70
130
μA
1
4
mA
I
CCD
V
CC
Deep
Power-Down
Current
V
CC
Word/Byte
Read Current
1
2
5
μA
I
CCR1
1,4,5
65
85
mA
I
CCR2
V
CC
Word/Byte
Read Current
1,4,
5,6
60
75
mA
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