參數(shù)資料
型號： 28F020
廠商： Intel Corp.
英文描述： 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲器)
中文描述： 5伏體擦除閃存（5V的整體擦寫閃速存儲器）
文件頁數(shù)： 1/47頁
文件大?。?/td> 758K
代理商： 28F020
E
December 1998
Order Number: 290663-001
n
Flash Electrical Chip-Erase
1-Mbit: 1 Second Typical Chip-Erase
2-Mbit: 2 Second Typical Chip-Erase
n
Quick-Pulse Programming Algorithm
10 μs Typical Byte-Program
1-Mbit: 1 Second Chip-Program
2-Mbit: 2 Second Chip-Program
n
100,000 Erase/Program Cycles
n
12.0 V ±5% V
PP
n
High-Performance Read
90 ns Maximum Access Time
n
CMOS Low Power Consumption
10 mA Typical Active Current
50 μA Typical Standby Current
0 Watts Data Retention Power
n
Integrated Program/Erase Stop Timer
n
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
n
Noise Immunity Features
±10% V
CC
Tolerance
Maximum Latch-Up Immunity
through EPI Processing
n
ETOX Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
n
JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
n
Extended Temperature Options
The Intel
5 Volt Bulk Erase CMOS flash memory offers the most cost-effective and reliable alternative for
read/write random access nonvolatile memory. The 28F010 and 28F020 add electrical chip-erasure and
reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a
PROM-programmer socket; on-board during subassembly test; in-system during final test; and in-system
after sale. The 28F010 and 28F020 increase memory flexibility, while contributing to time and cost savings.
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Similarly, the
28F020 is a 2048 kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Both devices are
offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC
standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel
ETOX (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V
PP
supply, the
28F010 and 28F020 perform 100,000 erase and program cycles—well within the time limits of the quick-
pulse programming and quick-erase algorithms.
The Intel 28F010 and 28F020 employ advanced CMOS circuitry for systems requiring high-performance
access speeds, low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-
state performance for a wide range of microprocessors and microcontrollers. Maximum standby current of
100 μA translates into power savings when the device is deselected. Finally, the highest degree of latch-up
protection is achieved through Intel's unique EPI processing. Prevention of latch-up is provided for stresses
up to 100 mA on address and data pins, from –1 V to V
CC
+ 1 V.
With Intel ETOX process technology base, the 28F010 and 28F020 build on years of EPROM experience to
yield the highest levels of quality, reliability, and cost-effectiveness.
5 VOLT BULK ERASE
FLASH MEMORY
28F010 and 28F020 (x8)
相關PDF資料
PDF描述
28F128J3A 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲器)
28F320J3A 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲器)
28F640J3A 3 Volt Intel StrataFlash Memory(3 V 64M位英特爾StrataFlash存儲器)
28F128 3 Volt Intel StrataFlash Memory
28F1602C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器)
相關代理商/技術參數(shù)
參數(shù)描述
28F020-150 制造商: 功能描述: 制造商:undefined 功能描述:
28F020G12 制造商: 功能描述: 制造商:undefined 功能描述:
28F020N12 制造商: 功能描述: 制造商:undefined 功能描述:
28F020N-15 制造商: 功能描述: 制造商:undefined 功能描述:
28F020N-90 制造商: 功能描述: 制造商:undefined 功能描述:
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