參數(shù)資料
型號(hào): 28F320B3
廠商: Intel Corp.
英文描述: SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述: 智能高級(jí)啟動(dòng)3座4 - ,8 - ,16 - ,32 - Mbit閃存家庭
文件頁數(shù): 13/82頁
文件大?。?/td> 749K
代理商: 28F320B3
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
7
A 32-Mbit device will have eight partitions; a 64-Mbit device will have 16 partitions; a
128-Mbit device will have 32 partitions. Each main block is 32-Kword in size.
The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O supports CPUs that boot from either the
top or bottom of the flash memory map. A top parameter flash device has the highest addressable
32-Kword block divided into eight smaller blocks. Conversely, a bottom parameter flash device has
the lowest addressable 32-Kword block divided into eight smaller blocks. Each of these eight 4-
Kword blocks are called parameter blocks. Parameter blocks are useful for frequently stored data
variables. Their smaller block size allows them to erase faster than main blocks. Page- and burst-
mode reads are also permitted in all blocks and across all partition boundaries.
It should be mentioned that the SRAM does not adhere to this multi-partition architecture. The
SRAM memory is organized as a single memory array.
相關(guān)PDF資料
PDF描述
28F640P3 Intel StrataFlash Embedded Memory
28F320C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F320D18 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F320C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
28F320J3D75 制造商:undefined 功能描述:
28F320J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
28F320J5_02 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
28F320S3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY