參數(shù)資料
型號： 29F016-90
廠商： Macronix International Co., Ltd.
英文描述： 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
中文描述： 1,600位[2米x 8]的CMOS平等部門閃存
文件頁數(shù)： 14/37頁
文件大?。?/td> 888K
代理商： 29F016-90
14
P/N:PM0590
REV. 1.4, NOV. 21, 2002
MX29F016
Read Operations
29F016-90
29F016-12
SYMBOL
tACC
tCE
tOE
tDF
tOH
PARAMETER
Address to Output Delay
CE to Output Delay
OE to Output Delay
OE High to Output Float
(
Note1)
Address to Output hold
MIN.
MAX.
90
90
40
30
MIN. MAX.
UNIT
ns
ns
ns
ns
ns
CONDITIONS
CE=OE=VIL
OE=VIL
CE=VIL
CE=VIL
CE=OE=VIL
120
120
50
30
0
0
0
0
NOTE:
1. tDF is defined as the time at which the output achieves the
open circuit condition and data is no longer driven.
TEST CONDITIONS:
Input pulse levels: 0.45V/2.4V*
Input rise and fall times is equal to or less than 20ns
Output load: 1 TTL gate + 100pF *(Including scope and jig)
Reference levels for measuring timing*: 0.8V, 2.0V
NOTES:
1. VIL min. = -1.0V for pulse width is equal to or less than
50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less
than 20 ns
If VIH is over the specified maximum value, read operation
cannot be guaranteed.
READ OPERATION
DC CHARACTERISTICS (TA = -40
°
C TO 85
°
C, VCC = 5V±10%)
SYMBOL
ILI
ILO
ISB1
ISB2
ICC1
ICC2
VIL
VIH
VOL
VOH
PARAMETER
Input Leakage Current
Output Leakage Current
Standby VCC current
MIN.
TYP
MAX.
1
±
1
1
5
30
50
0.8
VCC + 0.3
0.45
UNIT
uA
uA
mA
uA
mA
mA
V
V
V
V
CONDITIONS
VIN = GND to VCC
VOUT = GND to VCC
CE = VIH
CE = VCC + 0.3V
IOUT = 0mA, f=1MHz
IOUT = 0mA, f=10MHz
0.2
Operating VCC current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
-0.3
(NOTE 1)
2.0
IOL = 2.1mA
IOH = -2mA
2.4
CAPACITANCE (TA = 25
o
C, f = 1.0 MHz)
SYMBOL
CIN
COUT
PARAMETER
Input Capacitance
Output Capacitance
MIN.
TYP
MAX.
8
12
UNIT
pF
pF
CONDITIONS
VIN = 0V
VOUT = 0V
AC CHARACTERISTICS (TA = -40
o
C to 85
o
C, VCC = 5V
±
10%)
相關(guān)PDF資料
PDF描述
29F022B-12 2M-BIT[256K x 8]CMOS FLASH MEMORY
29F022B-120 2M-BIT[256K x 8]CMOS FLASH MEMORY
29F022B-55 2M-BIT[256K x 8]CMOS FLASH MEMORY
29F022B-70 2M-BIT[256K x 8]CMOS FLASH MEMORY
29F022B-90 2M-BIT[256K x 8]CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F016D70E4D 制造商: 功能描述: 制造商:undefined 功能描述:
29F016D-70E4D 制造商: 功能描述: 制造商:undefined 功能描述:
29F020 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
29F022B-12 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY
29F022B-120 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*