參數(shù)資料
型號： 29F016-90
廠商： Macronix International Co., Ltd.
英文描述： 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
中文描述： 1,600位[2米x 8]的CMOS平等部門閃存
文件頁數(shù)： 9/37頁
文件大?。?/td> 888K
代理商： 29F016-90
9
P/N:PM0590
REV. 1.4, NOV. 21, 2002
MX29F016
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the
device to be entirely pre-programmed prior to
executing the Automatic Set-up Sector Erase
command and Automatic Sector Erase command.
Upon executing the Automatic Sector Erase
command, the device will automatically program and
verify the sector(s) memory for an all-zero data
pattern. The system is not required to provide any
control or timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and
verify begin. The erase and verify operations are
complete when the data on Q7 is "1" and the data on
Q6 stops toggling for two consecutive read cycles, at
which time the device returns to the Read mode. The
system is not required to provide any control or timing
during these operations.
When using the Automatic Sector Erase algorithm,
note that the erase automatically terminates when
adequate erase margin has been achieved for the
memory array (no erase verification command is
required). Sector erase is a six-bus cycle operation.
There are two "unlock" write cycles. These are
followed by writing the set-up command 80H. Two
more "unlock" write cycles are then followed by the
sector erase command 30H. The sector address is
latched on the falling edge of WE, while the
command(data) is latched on the rising edge of WE.
Sector addresses selected are loaded into internal
register on the sixth falling edge of WE. Each
successive sector load cycle started by the falling
edge of WE must begin within 80
m
s from the rising
edge of the preceding WE. Otherwise, the loading
period ends and internal auto sector erase cycle
starts. (Monitor Q3 to determine if the sector erase
timer window is still open, see section Q3, Sector
Erase Timer.) Any command other than Sector
Erase(30H) or Erase Suspend(B0H) during the time-
out period resets the device to read mode.
Status
Q7
Q6
Q5
Q3
Q2
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Q7
0
1
Toggle
Toggle
1
0
0
0
0
1
0
1
Toggle
Toggle
(Note1)
Data
Erase Suspend Read
(Erase Suspended Sector)
Erase Suspend Read
(Non-Erase Suspended Sector)
Erase Suspend Program
(Non-Erase Suspended Sector)
In Progress
Erase Suspended Mode
Data
Data
Data
Data
Q7
Toggle
(Note2)
Toggle
Toggle
Toggle
0
0
1
(Note3)
1
N/A
N/A
Byte Program in Auto Program Algorithm
Program/Erase in Auto Erase Algorithm
Time Limits Erase Suspended Mode
Q7
0
Q7
1
1
1
0
1
0
Exceeded
Erase Suspend Program
(Non-Erase Suspended Sector)
Table 4. Write Operation Status
Notes:
1.Performing successive read operations from the erase-suspended sector will cause Q2 to toggle.
2.Performing successive read operations from any address will cause Q6 to toggle.
3.Reading the byte address being programmed while in the erase-suspend program mode will indicate logic "1" at the Q2 bit.
However, successive reads from the erase-suspended sector will cause Q2 to toggle.
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29F022B-12 2M-BIT[256K x 8]CMOS FLASH MEMORY
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