參數(shù)資料
型號: 29LV160B
廠商: Advanced Micro Devices, Inc.
元件分類: DRAM
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存
文件頁數(shù): 22/63頁
文件大小: 762K
代理商: 29LV160B
22
P/N:PM1041
MX29LV160BT/BB
REV. 1.2, JUL. 01, 2004
R
CAPACITANCE TA = 25
o
C, f = 1.0 MHz
SYMBOL
CIN1
CIN2
COUT
PARAMETER
Input Capacitance
Control Pin Capacitance
Output Capacitance
MIN.
TYP
6
7.5
8.5
MAX.
7.5
9
12
UNIT
pF
pF
pF
CONDITIONS
VIN = 0V
VIN = 0V
VOUT = 0V
NOTES:
1.VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2.VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3.Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns.
Symbol
PARAMETER
MIN.
TYP
MAX.
UNIT
CONDITIONS
ILI
Input Leakage Current
±
1
uA
VIN = VSS to VCC, VCC=VCC max
ILIT
A9 Input Leakage Current
35
uA
VCC=VCC max; A9=12.5V
ILO
Output Leakage Current
±
1
uA
VOUT = VSS to VCC, VCC=VCC max
ICC1
VCC Active Read Current
9
16
mA
CE=VIL, OE=VIH
@5MHz
2
4
mA
(Byte Mode)
@1MHz
9
16
mA
CE=VIL, OE=VIH
@5MHz
2
4
mA
(Word Mode)
@1MHz
ICC2
VCC Active write Current
20
30
mA
CE=VIL, OE=VIH, WE=VIL
ICC3
VCC Standby Current
0.2
5
uA
CE; RESET=VCC
±
0.3V
RESET=VSS
±
0.3V
ICC4
VCC Standby Current
0.2
5
uA
During Reset (See Conditions)
ICC5
Automatic sleep mode
0.2
5
uA
VIH=VCC
±
0.3V;VIL=VSS
±
0.3V
VIL
Input Low Voltage (Note 1)
-0.5
0.8
V
VIH
Input High Voltage
0.7xVCC
VCC+ 0.3
V
VID
Voltage for Automatic
Select and Temporary
11.5
12.5
V
VCC=3.3V
Sector Unprotect
VOL
Output Low Voltage
0.45
V
IOL = 4.0mA, VCC= VCC min
VOH1
Output High Voltage (TTL)
0.85xVCC
IOH = -2mA, VCC=VCC min
VOH2
Output High Voltage
VCC-0.4
IOH = -100uA, VCC min
(CMOS)
VLKO
Low VCC Lock-out
1.4
2.1
V
Voltage
Table 9. DC CHARACTERISTICS
TA = -40
o
C TO 85
o
C, VCC = 2.7V~3.6V
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