參數(shù)資料
型號: 29LV160B
廠商: Advanced Micro Devices, Inc.
元件分類: DRAM
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16Mb(2M×8位/1Mx16位), 3V, CMOS引導扇區(qū)閃存
文件頁數(shù): 51/63頁
文件大?。?/td> 762K
代理商: 29LV160B
51
P/N:PM1041
MX29LV160BT/BB
REV. 1.2, JUL. 01, 2004
R
Table 14. TEMPORARY SECTOR UNPROTECT
Parameter Std.
Description
Test Setup
All Speed Options Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET Setup Time for Temporary Sector Unprotect
Min
4
us
Note:
Not 100% tested
Figure 26. TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM
RESET
CE
WE
RY/BY
tVIDR
tVIDR
Program or Erase Command Sequence
12V
0 or Vcc
0 or Vcc
tRSP
Figure 27. Q6 vs Q2 for Erase and Erase Suspend Operations
NOTES:
The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended
WE
Enter Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Erase
Resume
Erase
Complete
Erase
Q6
Q2
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