參數(shù)資料
型號(hào): 29LV160B
廠商: Advanced Micro Devices, Inc.
元件分類(lèi): DRAM
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 8/63頁(yè)
文件大小: 762K
代理商: 29LV160B
8
P/N:PM1041
MX29LV160BT/BB
REV. 1.2, JUL. 01, 2004
R
QUERY COMMAND AND COMMON FLASH
INTERFACE (CFI) MODE
MX29LV160BT/BB is capable of operating in the CFI
mode. This mode all the host system to determine the
manufacturer of the device such as operating param-
eters and configuration. Two commands are required in
CFI mode. Query command of CFI mode is placed first,
then the Reset command exits CFI mode. These are
described in Table 4.
The single cycle Query command is valid only when the
device is in the Read mode, including Erase Suspend,
Standby mode, and Automatic Select mode; however, it
is ignored otherwise.
The Reset command exits from the CFI mode to the
Read mode, or Erase Suspend mode, or Automatic Se-
lect mode. The command is valid only when the device
is in the CFI mode.
Table 4-1. CFI mode: Identification Data Values
(All values in these tables are in hexadecimal)
Description
Address
(Byte Mode)
20
22
24
26
28
2A
2C
2E
30
32
34
Address
(Word Mode)
10
11
12
13
14
15
16
17
18
19
1A
Data
Query-unique ASCII string "QRY"
0051
0052
0059
0002
0000
0040
0000
0000
0000
0000
0000
Primary vendor command set and control interface ID code
Address for primary algorithm extended query table
Alternate vendor command set and control interface ID code (none)
Address for secondary algorithm extended query table (none)
Table 4-2. CFI Mode: System Interface Data Values
(All values in these tables are in hexadecimal)
Description
Address
(Byte Mode)
36
38
3A
3C
3E
40
42
44
46
48
4A
4C
Address
(Word Mode)
1B
1C
1D
1E
1F
20
21
22
23
24
25
26
Data
VCC supply, minimum (2.7V)
VCC supply, maximum (3.6V)
VPP supply, minimum (none)
VPP supply, maximum (none)
Typical timeout for single word/byte write (2
N
us)
Typical timeout for Minimum size buffer write (2
N
us) (not supported)
Typical timeout for individual sector erase (2
N
ms)
Typical timeout for full chip erase (2
N
ms)
Maximum timeout for single word/byte write times (2
N
X Typ)
Maximum timeout for buffer write times (2
N
X Typ)
Maximum timeout for individual sector erase times (2
N
X Typ)
Maximum timeout for full chip erase times (not supported)
0027
0036
0000
0000
0004
0000
000A
0000
0005
0000
0004
0000
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