參數(shù)資料
型號: 29LV160B
廠商: Advanced Micro Devices, Inc.
元件分類: DRAM
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16Mb(2M×8位/1Mx16位), 3V, CMOS引導扇區(qū)閃存
文件頁數(shù): 54/63頁
文件大?。?/td> 762K
代理商: 29LV160B
54
P/N:PM1041
MX29LV160BT/BB
REV. 1.2, JUL. 01, 2004
R
MIN.
MAX.
Input Voltage with respect to GND on all pins except I/O pins
-1.0V
12.5V
Input Voltage with respect to GND on all I/O pins
-1.0V
Vcc + 1.0V
VCC Current
-100mA
+100mA
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
LIMITS
TYP.(2)
PARAMETER
MIN.
MAX.(3)
UNITS
Sector Erase Time
0.7
15
sec
Chip Erase Time
15
30
sec
Byte Programming Time
9
300
us
Word Programming Time
11
360
us
Chip Programming Time
Byte Mode
18
54
sec
Word Mode
12
36
sec
Erase/Program Cycles
100,000
Cycles
LATCH-UP CHARACTERISTICS
ERASE AND PROGRAMMING PERFORMANCE (1)
Note:
1. Not 100% Tested, Excludes external system level over head.
2. Typical values measured at 25
°
C, 3V.
3. Maximum values measured at 85
°
C, 2.7V, 100,000 cycles.
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