參數(shù)資料
型號: 29LV160B
廠商: Advanced Micro Devices, Inc.
元件分類: DRAM
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存
文件頁數(shù): 34/63頁
文件大?。?/td> 762K
代理商: 29LV160B
34
P/N:PM1041
MX29LV160BT/BB
REV. 1.2, JUL. 01, 2004
R
Figure 8. AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector indicated by A12 to A19 are erased. External
erase verify is not required because data are verified
automatically by internal control circuit. Erasure comple-
tion can be verified by DATA polling or toggle bit check-
ing after automatic erase starts. Device outputs 0 dur-
ing erasure and 1 after erasure on Q7. (Q6 is for toggle
bit; see toggle bit, DATA polling, timing waveform)
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
tWC
Address
OE
CE
55h
2AAh
SA
30h
ProIn
VA
VA
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
tAS
tAH
tGHWL
tCH
tWP
tDS
tDH
tWHWH2
Read Status Data
Erase Command Sequence(last two cycle)
tBUSY
tRB
tCS
tWPH
tVCS
WE
Data
RY/BY
VCC
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