- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371440 > 29LV800TE (Fujitsu Limited) 8M (1M x 8/512 K x 16) BIT PDF資料下載
參數(shù)資料
| 型號： | 29LV800TE |
| 廠商： | Fujitsu Limited |
| 英文描述： | 8M (1M x 8/512 K x 16) BIT |
| 中文描述： | 8米（3米x五百一十二分之八畝× 16）位 |
| 文件頁數(shù)： | 12/58頁 |
| 文件大?。?/td> | 292K |
| 代理商： | 29LV800TE |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁
MBM29LV800TE/BE
60/70/90
11
MBM29LV800TE/BE Command Definitions
*1 : Both of these reset commands are equivalent.
*2 : This command is valid during Fast Mode.
*3 : This command is valid while RESET
=
V
ID
(except during HiddenROM MODE) .
*4 : The data “00h” is also acceptable.
*5 : The fourth bus cycle is only for read.
Notes :
Address bits A
18
to A
11
=
X
=
“H” or “L” for all address commands except or Program Address (PA) and
Sector Address (SA) .
Bus operations are defined in “MBM29LV800TE/BE User Bus Operations (BYTE = V
IH
)” and
“MBM29LV800TE/BE User Bus Operations (BYTE = V
IL
)”.
RA
=
Address of the memory location to be read.
IA
=
Autoselect read address that sets A
6
, A
1
, A
0
.
PA
=
Address of the memory location to be programmed. Addresses are latched on the falling edge of
the WE pulse.
SA
=
Address of the sector to be erased. The combination of A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
will
uniquely select any sector.
Command
Sequence
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second
Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data
Read/Reset*
1
Word
1
XXXh
F0h
Byte
Read/Reset*
1
Word
3
555h
AAAh
555h
AAAh
555h
AAAh
555h
AAAh
555h
AAAh
XXXh
XXXh
555h
AAAh
XXXh
XXXh
XXXh
XXXh
AAh
2AAh
555h
2AAh
555h
2AAh
555h
2AAh
555h
2AAh
555h
2AAh
555h
55h
555h
AAAh
555h
AAAh
555h
AAAh
555h
AAAh
555h
AAAh
555h
AAAh
F0h
RA*
5
RD*
5
Byte
Autoselect
Word
3
AAh
55h
90h
IA*
5
ID*
5
Byte
Program
Word
4
AAh
55h
A0h
PA
PD
Byte
Chip Erase
Word
6
AAh
55h
80h
555h
AAAh
555h
AAAh
AAh
2AAh
555h
2AAh
555h
55h
555h
AAAh
10h
Byte
Sector Erase
Word
6
AAh
55h
80h
AAh
55h
SA
30h
Byte
Erase Suspend
Erase Resume
1
1
B0h
30h
Set to
Fast Mode
Word
3
AAh
55h
20h
Byte
Fast
Program*
2
Word
2
A0h
PA
PD
Byte
Reset from
Fast Mode*
2
Word
2
90h
XXXh
XXXh
*
4
F0h
Byte
Extended
Sector
Protection*
3
Word
3
XXXh
60h
SPA
60h
SPA
40h SPA*
5
SD*
5
Byte
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 29PL256N | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| 29PS | 25PS, 42PS, 44PS, 45PS and 46PS Series Pressure Switches |
| 29SL800CB-90 | 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY |
| 29SL800CT-90 | 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY |
| 29U194A | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29M132 | 功能描述:工業(yè)移動感應器和位置傳感器 RESISTIVE & OPTICAL RoHS:否 制造商:Honeywell 輸出類型:Analog - Current 電壓額定值:12 VDC to 30 VDC 線性:+/- 0.0011 % 溫度范圍:- 40 C to + 85 C 總電阻: 容差: 類型:Rotary Sensor |
| 29M30050R008BL | 制造商:Micro Plastics Inc 功能描述: |
| 29M426 | 制造商:Honeywell Sensing and Control 功能描述: |
| 29M428 | 功能描述:工業(yè)移動感應器和位置傳感器 RESISTIVE & OPTICAL RoHS:否 制造商:Honeywell 輸出類型:Analog - Current 電壓額定值:12 VDC to 30 VDC 線性:+/- 0.0011 % 溫度范圍:- 40 C to + 85 C 總電阻: 容差: 類型:Rotary Sensor |
| 29M455 | 制造商:Clarostat 功能描述:_ |
發(fā)布緊急采購，3分鐘左右您將得到回復。