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參數(shù)資料
| 型號： | 2N6034 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Darlington Complementary Silicon Power Transistors(4A，40W，40V（集電極-發(fā)射極），塑料，補償型硅PNP功率晶體管) |
| 中文描述： | 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | 2N6034 |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 12
1
Publication Order Number:
2N6035/D
(PNP) 2N6034, 2N6035,
2N6036 (NPN) 2N6038,
2N6039
Plastic Darlington
Complementary Silicon
Power Transistors
. . . designed for general
purpose amplifier and low
speed
switching applications.
ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94, V
0 @ 1/8”
These devices are available in Pb
free package(s). Specifications herein
apply to both standard and Pb
free devices. Please see our website at
www.onsemi.com for specific Pb
free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
2N6034
2N6035, 2N6038
2N6036, 2N6039
V
CEO
40
60
80
Vdc
Collector
Base Voltage
2N6034
2N6035, 2N6038
2N6036, 2N6039
V
CBO
40
60
80
Vdc
Emitter
Base Voltage
V
EBO
5.0
Vdc
Collector Current
Continuous
Peak
I
C
4.0
8.0
Adc
Apk
Base Current
I
B
100
mAdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
40
320
Watts
mW/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to
+150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recom-
mended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect de-
vice reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction
to
Case
R
JC
3.12
°
C/W
Thermal Resistance, Junction
to
Ambient
R
JA
83.3
°
C/W
http://onsemi.com
Device
Package
Shipping
2N6034
TO
225AA
500 Units/Box
4.0 A DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 V, 40 W
x
Y
WW
= 4, 5, 6, 8, 9
= Year
= Work Week
2N6036
TO
225AA
500 Units/Box
2N6038
TO
225AA
500 Units/Box
TO
225AA
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
2
N603x
321
2N6035
TO
225AA
500 Units/Box
ORDERING INFORMATION
2N6039
TO
225AA
500 Units/Box
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PDF描述 |
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| 2N6045 | Plastic Medium-Power Complementary Silicon Transistor(8A，75W，100V（集電極-發(fā)射極），塑料，補償型硅NPN中等功率晶體管) |
| 2N6043G | Plastic Medium−Power Complementary Silicon Transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6034G | 功能描述:達林頓晶體管 4A 40V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6034SGS | 制造商:SGS 功能描述:2N6034 |
| 2N6035 | 功能描述:達林頓晶體管 PNP Pwr Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6035/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Darlington Silicon Power Transistors |
| 2N6035_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Darlington Complementary Silicon Power Transistors |
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