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參數(shù)資料
| 型號： | 2N6034 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Darlington Complementary Silicon Power Transistors(4A，40W，40V（集電極-發(fā)射極），塑料，補(bǔ)償型硅PNP功率晶體管) |
| 中文描述： | 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | 2N6034 |
(PNP) 2N6034, 2N6035, 2N6036 (NPN) 2N6038, 2N6039
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25 C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
2N6034
2N6035, 2N6038
2N6036, 2N6039
V
CEO(sus)
40
60
80
—
—
—
Vdc
Collector
Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
(V
CE
= 60 Vdc, I
B
= 0)
(V
CE
= 80 Vdc, I
B
= 0)
2N6034
2N6035, 2N6038
2N6036, 2N6039
I
CEO
—
—
—
100
100
100
μ
A
Collector
Cutoff Current
(V
CE
= 40 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 40 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 125 C)
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 125 C)
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 125 C)
2N6034
2N6035, 2N6038
2N6036, 2N6039
2N6034
2N6035, 2N6038
2N6036, 2N6039
I
CEX
—
—
—
—
—
—
100
100
100
500
500
500
μ
A
Collector
Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
2N6034
2N6035, 2N6038
2N6036, 2N6039
I
CBO
—
—
—
0.5
0.5
0.5
mAdc
Emitter
Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
—
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.5 Adc, V
CE
= 3.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
(I
C
= 4.0 Adc, V
CE
= 3.0 Vdc)
h
FE
500
750
100
—
15,000
—
—
Collector
Emitter Saturation Voltage
(I
C
= 2.0 Adc, I
B
= 8.0 mAdc)
(I
C
= 4.0 Adc, I
B
= 40 mAdc)
V
CE(sat)
—
—
2.0
3.0
Vdc
Base
Emitter Saturation Voltage (I
C
= 4.0 Adc, I
B
= 40 mAdc)
V
BE(sat)
—
4.0
Vdc
Base
Emitter On Voltage (I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
V
BE(on)
—
2.8
Vdc
DYNAMIC CHARACTERISTICS
Small
Signal Current
Gain (I
C
= 0.75 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
|h
fe
|
25
—
—
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
2N6034, 2N6035, 2N6036
2N6038, 2N6039
C
ob
—
—
200
100
pF
*Indicates JEDEC Registered Data.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6034G | 功能描述:達(dá)林頓晶體管 4A 40V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6034SGS | 制造商:SGS 功能描述:2N6034 |
| 2N6035 | 功能描述:達(dá)林頓晶體管 PNP Pwr Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6035/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Darlington Silicon Power Transistors |
| 2N6035_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Darlington Complementary Silicon Power Transistors |
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