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參數(shù)資料
| 型號： | 2N6034 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Darlington Complementary Silicon Power Transistors(4A，40W，40V（集電極-發(fā)射極），塑料，補(bǔ)償型硅PNP功率晶體管) |
| 中文描述： | 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | 2N6034 |
(PNP) 2N6034, 2N6035, 2N6036 (NPN) 2N6038, 2N6039
http://onsemi.com
4
ACTIVE
REGION SAFE
OPERATING AREA
1.0
7.0
5.0
5.0
Figure 4. 2N6035, 2N6036
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
3.0
2.0
0.1
7.0
10
30
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
70
1.0
I
T
J
= 150
°
C
dc
1.0ms
100
μ
s
Figure 5. 2N6038, 2N6039
0.7
0.5
0.2
20
2N6036
2N6035
0.3
1.0
7.0
5.0
5.0
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
3.0
2.0
0.1
7.0
10
30
50
100
70
1.0
0.7
0.5
I
0.2
20
2N6039
2N6038
0.3
5.0ms
100
μ
s
1.0ms
5.0ms
dc
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
T
J
= 150
°
C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 4 and 5 is based on T
J(pk)
= 150 C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150 C. T
J(pk)
may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
0.04
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
10
0.4 0.6 1.0
2.0
40
4.0
0.06 0.1
0.2
C100
50
30
T
C
= 25
°
C
C
ib
70
C
ob
PNP
NPN
20
6.0
10
20
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6034G | 功能描述:達(dá)林頓晶體管 4A 40V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6034SGS | 制造商:SGS 功能描述:2N6034 |
| 2N6035 | 功能描述:達(dá)林頓晶體管 PNP Pwr Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6035/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Darlington Silicon Power Transistors |
| 2N6035_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Darlington Complementary Silicon Power Transistors |
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