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參數(shù)資料
| 型號(hào)： | 2N6274 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP POWER SILICON TRANSISTOR |
| 中文描述： | 50 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2N6274 |
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
0.01
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r
R
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
θ
JC(t) = r(t)
θ
JC
θ
JC = 0.7
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
2000
100
50
2.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
10
5.0
2.0
1.0
0.5
0.2
0.02
3.0
5.0 7.0
10
20
30
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
°
C (SINGLE PULSE)
CURVES APPLY BELOW
RATED V(BR)CEO
50
0.1
0.05
I
2N6274
2N6275
2N6277
TJ = 200
°
C
dc
5.0 ms
1.0 ms
0.01
100
70
200
100
μ
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
200 C. TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
3.0
2.0
0.5
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.7
1.0
2.0
3.0
7.0
10
20
tf @ VCC = 80 V
IB1 = IB2
IC/IB = 10
TJ = 25
°
C
t
μ
ts
5.0
10,000
7000
5000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
1.0
2.0
5.0
20
50
100
10
0.2
0.5
C
100
TJ = 25
°
C
Cib
Cob
5.0
30
50
200
300
500
700
3000
2000
1000
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| 2N6292 | Complementary Silicon Plastic Power Transistor(7A，40W，70V（集電極-發(fā)射極），塑料，補(bǔ)償型硅NPN功率晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6274_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN POWER SILICON TRANSISTOR |
| 2N6274A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N6275 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 50A 3PIN TO-3 - Bulk |
| 2N6275A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50A I(C) | TO-204AE |
| 2N6276 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 50A 3PIN TO-3 - Bulk |
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