參數(shù)資料
型號: 2N6277
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 功率晶體管
英文描述: PNP POWER SILICON TRANSISTOR
中文描述: 50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AE
封裝: TO-3, 2 PIN
文件頁數(shù): 1/6頁
文件大小: 169K
代理商: 2N6277
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use in industrial–military power amplifer and switching circuit
applications.
High Collector Emitter Sustaining —
VCEO(sus) = 100 Vdc (Min) — 2N6274
VCEO(sus)
= 120 Vdc (Min) — 2N6275
VCEO(sus)
= 150 Vdc (Min) — 2N6277
High DC Current Gain —
hFE = 30–120 @ IC = 20 Adc
hFE
= 10 (Min) @ IC = 50 Adc
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
Fast Switching Times @ IC 20 Adc
tr = 0.35
μ
s (Max)
ts = 0.8
μ
s (Max)
Collector–Base Voltage
Collector–Emitter Voltage
VCEO
Emitter–Base Voltage
VEB
120
100
140
120
6.0
180
150
Vdc
Vdc
Vdc
Total Device Dissipation @ TC = 25 C
Derate above 25 C
250
Watts
Characteristic
Thermal Resistance, Junction to Case
(1) Indicates JEDEC Registered Data.
Symbol
θ
Max
0.7
Unit
C/W
250
0
25
75
200
Figure 1. Power Derating
200
150
100
50
0
TC, CASE TEMPERATURE (
°
C)
100
50
125
150
175
P
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6274/D
*Motorola Preferred Device
50 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
250 WATTS
CASE 197A–05
TO–204AE
(TO–3)
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