- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372998 > 2N7002K (NXP SEMICONDUCTORS) N-channel TrenchMOS intermediate level FET PDF資料下載
參數(shù)資料
| 型號： | 2N7002K |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 340 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 243K |
| 代理商： | 2N7002K |
Philips Semiconductors
2N7002K
TrenchMOS logic level FET
Product data
Rev. 01 — 20 October 2003
2 of 12
9397 750 11703
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3.
Ordering information
4.
Limiting values
Table 2:
Type number
Ordering information
Package
Name
SOT23
Description
Plastic surface mounted package; 3 leads.
Version
SOT23
2N7002K
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
65
65
Max
60
60
±
15
340
215
680
0.83
+150
+150
Unit
V
V
V
mA
mA
mA
W
°
C
°
C
T
sp
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
sp
= 100
°
C; V
GS
= 10 V;
Figure 2
T
sp
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
sp
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
sp
= 25
°
C; pulsed; t
p
≤
10
μ
s
Electrostatic discharge voltage
V
esd
electrostatic discharge voltage
peak drain current
total power dissipation
storage temperature
junction temperature
T
sp
= 25
°
C
-
-
340
680
mA
mA
Human Body Model 1; C = 100 pF; R = 1.5 k
-
1
kV
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7002PT | 60 V, 310 mA N-channel Trench MOSFET |
| 2N7002PV | 60 V, 350 mA dual N-channel Trench MOSFET |
| 2N7002PW | 60 V, 310 mA N-channel Trench MOSFET |
| 2PA1576Q | PNP general-purpose transistor |
| 2PA1774QM | PNP general purpose transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002K / T1 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET 制造商:Vishay Siliconix 功能描述:TRANSISTOR, MOSFET |
| 2N7002K _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002K,215 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002K | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.34A SOT23 |
| 2N7002K_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。