- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372998 > 2N7002K (NXP SEMICONDUCTORS) N-channel TrenchMOS intermediate level FET PDF資料下載
參數(shù)資料
| 型號： | 2N7002K |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 340 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 243K |
| 代理商： | 2N7002K |
Philips Semiconductors
2N7002K
TrenchMOS logic level FET
Product data
Rev. 01 — 20 October 2003
6 of 12
9397 750 11703
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03an70
6 V
0
0.1
0.2
0.3
0.4
0.5
ID
(A)
0
0.5
1
1.5
2
VDS (V)
3.5 V
Tj = 25
°
C
VGS = 10V
4 V
4.5 V
3 V
03an72
0
0.1
0.2
0.3
0.4
0.5
ID
(A)
0
2
4
6
VGS (V)
VDS > ID x RDSon
Tj = 25
°
C
150
°
C
03an71
0
2
4
6
8
10
0
0.1
0.2
0.3
0.4
0.5
ID (A)
RDSon
(
)
VGS = 3.5 V
Tj = 25
°
C
4.5 V
4 V
10 V
6 V
03aa28
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
a
Tj (
°
C)
a
R
R
DSon 25 C
)
----------------------------
=
相關PDF資料 |
PDF描述 |
|---|---|
| 2N7002PT | 60 V, 310 mA N-channel Trench MOSFET |
| 2N7002PV | 60 V, 350 mA dual N-channel Trench MOSFET |
| 2N7002PW | 60 V, 310 mA N-channel Trench MOSFET |
| 2PA1576Q | PNP general-purpose transistor |
| 2PA1774QM | PNP general purpose transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002K / T1 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET 制造商:Vishay Siliconix 功能描述:TRANSISTOR, MOSFET |
| 2N7002K _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002K,215 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002K | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.34A SOT23 |
| 2N7002K_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。