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參數(shù)資料
| 型號： | 2N7002K |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 340 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 243K |
| 代理商： | 2N7002K |
Philips Semiconductors
2N7002K
TrenchMOS logic level FET
Product data
Rev. 01 — 20 October 2003
5 of 12
9397 750 11703
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
6.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 10
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
G
=
±
1 mA; V
DS
= 0 V
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 150
°
C
T
j
=
55
°
C
V
DS
= 48 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 500 mA;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
= 4.5 V; I
D
= 200 mA;
Figure 7
and
8
60
55
16
75
-
22
-
-
-
V
V
V
V
V
V
V
V
(BR)GSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
1
0.6
-
2
-
-
-
-
3.5
I
DSS
drain-source leakage current
-
-
-
0.01
-
50
1
10
500
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
-
2.8
5.2
3.8
3.9
7.2
5.3
Dynamic characteristics
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
on
turn-on time
t
off
turn-off time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 300 mA; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
Q
r
recovered charge
V
GS
= 0 V; V
DS
= 10 V; f = 1 MHz;
Figure 11
-
-
-
-
-
13
8
4
3
9
40
30
10
10
15
pF
pF
pF
ns
ns
V
DD
= 50 V; R
L
= 250
;
V
GS
= 10 V; R
G
= 50
; R
GS
= 50
-
-
-
0.93
30
30
1.5
-
-
V
ns
nC
I
S
= 300 mA; dI
S
/dt =
100 A/
μ
s;
V
GS
= 0 V; V
R
= 25 V
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