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參數(shù)資料
| 型號： | 2N7002K |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 340 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 243K |
| 代理商： | 2N7002K |
Philips Semiconductors
2N7002K
TrenchMOS logic level FET
Product data
Rev. 01 — 20 October 2003
8 of 12
9397 750 11703
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 0.5 A; V
DD
= 48 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03an73
0
0.1
0.2
0.3
0.4
0.5
IS
(A)
0
0.3
0.6
0.9
1.2
VSD (V)
Tj = 25
°
C
150
°
C
VGS = 0 V
03ab09
0
5
10
15
0
0.3
0.6
0.9
1.2
QG (nC)
VGS
(V)
ID = 0.5A
VDD = 48 V
Tj = 25
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002K / T1 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET 制造商:Vishay Siliconix 功能描述:TRANSISTOR, MOSFET |
| 2N7002K _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002K,215 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002K | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.34A SOT23 |
| 2N7002K_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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