參數(shù)資料
型號(hào): 2STN1360
廠商: STMICROELECTRONICS
元件分類: 功率晶體管
英文描述: 3 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT PACKAGE-4
文件頁(yè)數(shù): 1/11頁(yè)
文件大?。?/td> 276K
代理商: 2STN1360
October 2009
Doc ID 11783 Rev 2
1/11
11
2STD1360
2STF1360 - 2STN1360
Low voltage fast-switching NPN power transistors
Features
Very low collector-emitter saturation voltage
High current gain characteristic
Fast-switching speed
Applications
Emergency lighting
LED
Voltage regulation
Relay drive
Description
The devices are NPN transistors manufactured
using new “PB-HDC” (power bipolar high density
current) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary PNP types are the
2STD2360T4, the 2STF2360 and the 2STN2360.
Figure 1.
Internal schematic diagram
TO-252 (DPAK)
4
3
2
1
2
4
3
1
3
SOT-223
SOT-89
TAB
Table 1.
Device summary
Order codes
Marking
Packages
Packaging
2STD1360T4
D1360
DPAK
Tape and reel
2STF1360
1360
SOT-89
Tape and reel
2STN1360
N1360
SOT-223
Tape and reel
相關(guān)PDF資料
PDF描述
2STD1360T4 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252
2STF1550 5 A, 50 V, NPN, Si, POWER TRANSISTOR
2STN5551 0.6 A, 160 V, NPN, Si, POWER TRANSISTOR
2STP535FP 8 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SU424 5 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220F
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2STN1550 功能描述:兩極晶體管 - BJT IGBT & Power Bipolar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2STN2340 功能描述:兩極晶體管 - BJT LOW VOLTAGE FAST SWITCHING PNP POWER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2STN2360 功能描述:兩極晶體管 - BJT Lo Vltg fast switch pnp Pwr transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2STN2540 功能描述:兩極晶體管 - BJT Power Bipolar Transistors RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2STN2540_08 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Low voltage fast-switching PNP power bipolar transistor