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參數(shù)資料
| 型號： | 3SK296 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 3SK296 |
3SK296
4
30
24
18
12
6
2.0
0
V = 3.0 V
2.5 V
1.0 V
V = 6 V
f = 1 kHz
0.4
0.8
1.2
1.6
0.5 V
Gate1 to source voltage V (V)
F
f
Forward Transfer Admittance vs.
Gate1 to Source Voltage
|
2.0 V
1.5 V
20
0
25
20
15
10
5
1
2
5
10
V = 3 V
f = 900 MHz
V = 4 V
P
Drain current I (mA)
Power Gain vs. Drain Current
20
0
5
4
3
2
1
1
2
5
10
N
Drain current I (mA)
Noise Figure vs. Drain Current
V = 4 V
V = 3 V
f = 900 MHz
0
25
20
15
10
5
2
4
6
8
10
V = 3 V
I = 10 mA
f = 900 MHz
P
Drain to source voltage V (V)
Power Gain vs. Drain to Source Voltage
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PDF描述 |
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| 3SK297 | Silicon N-Channel Dual Gate MOS FET |
| 3SK298 | Silicon N-Channel Dual Gate MOS FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK296ZQ-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
| 3SK297 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Dual Gate MOS FET |
| 3SK297ZP-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
| 3SK298 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
| 3SK298ZP-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
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