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參數(shù)資料
| 型號： | 3SK296 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 3SK296 |
3SK296
7
S Parameter
(V
DS
= 4 V, V
G2S
= 3 V, I
D
= 10 mA, Z
O
= 50 )
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.999
–6.1
1.98
172.2
0.00094
79.2
0.989
–4.2
150
0.998
–9.1
1.97
168.4
0.00189
80.4
0.987
–6.1
200
0.992
–11.9
1.96
165.0
0.00230
79.5
0.986
–7.9
250
0.988
–14.8
1.96
161.0
0.00286
79.9
0.984
–9.8
300
0.985
–17.9
1.94
157.1
0.00364
75.2
0.981
–11.5
350
0.976
–20.6
1.92
153.7
0.00353
71.8
0.978
–13.4
400
0.971
–23.2
1.91
149.9
0.00419
70.7
0.975
–15.2
450
0.964
–26.3
1.88
146.8
0.00495
65.5
0.972
–17.2
500
0.961
–29.1
1.87
142.8
0.00509
62.7
0.968
–19.1
550
0.951
–32.2
1.86
139.4
0.00530
66.6
0.963
–20.8
600
0.949
–35.0
1.86
136.1
0.00550
63.8
0.960
–22.8
650
0.935
–37.6
1.81
132.9
0.00601
58.2
0.956
–24.5
700
0.933
–40.5
1.78
129.4
0.00582
60.6
0.950
–26.3
750
0.923
–42.9
1.77
125.7
0.00572
58.5
0.945
–28.0
800
0.916
–45.8
1.75
122.6
0.00553
56.3
0.941
–29.9
850
0.908
–49.0
1.72
119.1
0.00514
56.3
0.936
–31.7
900
0.900
–51.2
1.70
115.8
0.00543
52.9
0.930
–33.4
950
0.890
–54.0
1.67
112.6
0.00506
52.4
0.924
–35.2
1000
0.876
–56.4
1.65
109.3
0.00469
51.9
0.919
–37.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK296ZQ-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
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| 3SK297ZP-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
| 3SK298 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
| 3SK298ZP-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
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