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參數(shù)資料
| 型號(hào)： | 4AK18 |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Power MOS FET Array |
| 中文描述： | 硅N溝道功率MOS場(chǎng)效應(yīng)管陣列 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | 4AK18 |
4AK18
4
6
4
2
0
50
100
150
Ambient Temperature Ta (°C)
Channel
Dissipation
Pch
(W)
5
3
1
125
75
25
Condition : Channel Dissipation of
each die is identical
Maximum Channel Dissipation Curve
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
30
20
10
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
125
75
25
Condition : Channel Dissipation
of each die is identical
Maximum Channel Dissipation Curve
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
100
10
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
30
3
0.1
0.3
1.0
3
10
30
100
Ta = 25°C
10
s
100
s
1 ms
PW
=
10
ms
(1
shot)
DC
Operation
(T
C =
25°C)
Operation
in
this
area
is
limited
by
R
DS
(on)
0.3
1.0
Typical Output Characteristics
6
Drain to Source Voltage VDS (V)
8
4
2
10
Drain
Current
I
D
(A)
0
1
2
3
4
0
5
VGS = 2 V
Pulse Test
10 V
5 V
4 V
3 V
3.5 V
2.5 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4AK19 | Silicon N Channel MOS FET High Speed Power Switching |
| 4AK20 | Silicon N-Channel Power MOS FET Array |
| 4AK21 | Silicon N-Channel Power MOS FET Array |
| 4AK22 | Silicon N-Channel Power MOS FET Array |
| 4AK23 | Silicon N-Channel Power MOS FET Array |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4AK19 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 4AK20 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK21 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK22 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK23 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
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