參數(shù)資料
型號(hào): 4AK26
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel Power MOS FET Array
中文描述: 硅N溝道功率MOS場(chǎng)效應(yīng)管陣列
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 52K
代理商: 4AK26
4AK26
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
250
AV
DS = 50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
0.045
0.06
I
D = 5 A
V
GS = 10 V*
1
0.056
0.075
I
D = 5 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|10
12
S
I
D = 5 A
V
DS = 10 V*
1
Input capacitance
Ciss
1400
pF
V
DS = 10 V
Output capacitance
Coss
720
pF
V
GS = 0
Reverse transfer capacitance
Crss
220
pF
f = 1 MHz
Turn-on delay time
t
d(on)
15
ns
I
D = 10 A
Rise time
t
r
95
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
300
ns
R
L = 3
Fall time
t
f
170
ns
Body to drain diode forward
voltage
V
DF
1.05
V
I
F = 10 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
110
sI
F = 10 A, VGS = 0,
dIF/dt = 50 A/
s
Note:
1. Pulse Test
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