參數(shù)資料
型號(hào): 4AK26
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel Power MOS FET Array
中文描述: 硅N溝道功率MOS場效應(yīng)管陣列
文件頁數(shù): 5/9頁
文件大?。?/td> 52K
代理商: 4AK26
4AK26
5
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
8
4
2
010
2
3
4
5
0
1
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
ID = 50 A
10 A
20 A
10
Drain Current ID (A)
20
5
2
100
0.02
0.05
0.1
0.2
0.5
1
0.01
0.005
50
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
Static
Resistance
R
DS
(on)
(
)
VGS = 4 V
10 V
Pulse Test
80
Case Temperature TC (°C)
120
40
0
0.02
0.04
0.06
0.08
0.10
–40
0
160
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
ID = 20 A
20 A
Pulse Test
VGS = 4 V
VGS = 10 V
10 A
5 A
10 A
5 A
Forward Transfer Admittance
vs. Drain Current
100
50
20
10
5
2
1
0.5
1.0
2
5
10
50
Drain Current ID (A)
20
Forward
Transfer
Admittance
yfs
(S)
TC = 25°C
VDS = 10 V
Pulse Test
–25°C
75°C
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