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參數(shù)資料
| 型號(hào)： | 84072xxx |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL TRANSPARENT D-TYPE LATCHES WITH THREE STATE OUTPUTS MONOLITIC SILICON |
| 中文描述： | 微電路，數(shù)字化，高速的CMOS，八路透明D類(lèi)鎖存器與三態(tài)輸出MONOLITIC硅 |
| 文件頁(yè)數(shù)： | 13/17頁(yè) |
| 文件大?。?/td> | 166K |
| 代理商： | 84072XXX |
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STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
SIZE
A
84072
REVISION LEVEL
F
SHEET
13
DSCC FORM 2234
APR 97
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a. Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
test method 1015.
(2) T
A
= +125
°
C, minimum.
b. Interim and final electrical test parameters shall be as specified in table II herein.
4.2.2 Additional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015 of MIL-STD-883.
b. Interim and final electrical test parameters shall be as specified in table II herein.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection
a. Tests shall be as specified in table II herein.
b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 3 herein. The test
vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. All possible input
to output logic patterns per function shall be guaranteed, if not tested, to the truth table in figure 3, herein. For device
classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device.
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