參數(shù)資料
型號(hào)： 934026170127
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： 50 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝： PLASTIC, TO-220, SOT-263-01, 5 PIN
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 93K
代理商： 934026170127
Philips Semiconductors
Product specification
PowerMOS transistor
BUK202-50Y
TOPFET high side switch
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
SYMBOL
PARAMETER
MIN.
UNIT
overload protected power switch
based on MOSFET technology in a
I
L
Nominal load current (ISO)
9
A
5 pin plastic envelope, configured
as a single high side switch.
SYMBOL
PARAMETER
MAX.
UNIT
APPLICATIONS
V
BG
Continuous off-state supply voltage
50
V
General controller for driving
I
L
Continuous load current
20
A
lamps, motors, solenoids, heaters.
T
j
Continuous junction temperature
150
C
R
ON
On-state resistance
38
m
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection -
self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT263
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
Ground
2
Input
3
Battery (+ve supply)
4
Status
5
Load
Fig. 2.
Fig. 3.
tab
connected to pin 3
BATT
LOAD
INPUT
GROUND
STATUS
POWER
MOSFET
RG
CONTROL &
PROTECTION
CIRCUITS
12 3 4 5
263-01
leadform
tab
B
G
L
I
S
HSS
TOPFET
April 1995
1
Rev 1.100
相關(guān)PDF資料
PDF描述
934026490115 0.9 A, 100 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
934026520135 1 A, 100 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
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