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參數(shù)資料
| 型號： | 934026170127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 50 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263-01, 5 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 93K |
| 代理商： | 934026170127 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK202-50Y
TOPFET high side switch
DYNAMIC CHARACTERISTICS
T
mb = 25 C; VBG = 13 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Inductive load turn-off
-V
LG
Negative load voltage
1
V
IG = 0 V; IL = 10 A; tp = 300 s15
20
25
V
Short circuit load protection
2
V
IG = 5 V; RL ≤ 10 m
t
d sc
Response time
-
75
-
s
I
L
Load current prior to turn-off
t < t
d sc
-50
-
A
Overload protection
3
I
L(lim)
Load current limiting
V
BL = 9 V; tp = 300 s34
45
64
A
SWITCHING CHARACTERISTICS
T
mb = 25 C, VBG = 13 V, for resistive load RL = 13 .
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
During turn-on
to V
IG = 5 V
t
d on
Delay time
to 10% V
L
-16
-
s
dV/dt
on
Rate of rise of load voltage
-
0.7
2
V/
s
t
on
Total switching time
to 90% V
L
-
140
-
s
During turn-off
to V
IG = 0 V
t
d off
Delay time
to 90% V
L
-40
-
s
dV/dt
off
Rate of fall of load voltage
-
0.7
2
V/
s
t
off
Total switching time
to 10% V
L
-70
-
s
CAPACITANCES
T
mb = 25 C; f = 1 MHz; VIG = 0 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
ig
Input capacitance
V
BG = 13 V
-
15
20
pF
C
bl
Output capacitance
V
BL = VBG = 13 V
-
500
700
pF
C
sg
Status capacitance
V
SG = 5 V
-
11
15
pF
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than V
BL(TO), the device remains in
current limiting until the overtemperature protection operates.
April 1995
5
Rev 1.100
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