參數資料
型號: 934026170127
廠商: NXP SEMICONDUCTORS
元件分類: 外設及接口
英文描述: 50 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝: PLASTIC, TO-220, SOT-263-01, 5 PIN
文件頁數: 13/13頁
文件大?。?/td> 93K
代理商: 934026170127
Philips Semiconductors
Product specification
PowerMOS transistor
BUK202-50Y
TOPFET high side switch
Fig.22. Typical status clamping voltage, V
SG = f(Tj).
parameter V
IG; conditions IS = 100 A, VBG = 13 V
Fig.23. Low load current detection threshold.
I
L(OC) = f(Tj); conditions VIG = 5 V; VBG = 13 V
Fig.24. Supply typical undervoltage thresholds.
V
BG(TO) = f(Tj); conditions VIG = 3 V; IL = 100 mA
Fig.25. Supply typical overvoltage thresholds.
V
BG(LP) = f(Tj); conditions VIG = 5 V; IL = 100 mA
Fig.26. Typical battery to ground clamping voltage.
V
BG = f(Tj); parameter IG
Fig.27. Typical negative load clamping characteristic.
I
L = f(VLG); conditions VIG = 0 V, tp = 300 s, 25 C
-60
-20
20
60
100
140
180
Tj / C
VSG / V
BUK202-50Y
8.0
7.5
7.0
6.5
5
VIG / V =
0
-60
-20
20
60
100
140
180
Tj / C
VBG(LP) / V
BUK202-50Y
47
46
45
44
43
on
off
-60
-20
20
60
100
140
180
Tj / C
IL(OC) / A
BUK202-50Y
1.0
0.8
0.6
0.4
0.2
0
typ.
max.
min.
-60
-20
20
60
100
140
180
Tj / C
VBG / V
BUK202-50Y
65
60
55
50
10 uA
1 mA
IG =
-60
-20
20
60
100
140
180
Tj / C
VBG(TO) / V
BUK202-50Y
5
4
3
2
1
0
on
off
-24
-20
-16
-12
-8
-4
0
VLG / V
IL / A
BUK202-50Y
50
40
30
20
10
0
April 1995
9
Rev 1.100
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