參數(shù)資料
型號(hào)： 934026170127
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： 外設(shè)及接口
英文描述： 50 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝： PLASTIC, TO-220, SOT-263-01, 5 PIN
文件頁(yè)數(shù)： 2/13頁(yè)
文件大?。?/td> 93K
代理商： 934026170127
Philips Semiconductors
Product specification
PowerMOS transistor
BUK202-50Y
TOPFET high side switch
Fig.28. Typical negative load clamping voltage.
V
LG = f(Tj); parameter IL; condition VIG = 0 V.
Fig.29. Typical battery to load clamping voltage.
V
BL = f(Tj); parameter IL; condition IG = 5 mA.
Fig.30. Typical reverse battery characteristic.
I
G = f(VBG); conditions IL = 0 A, Tj = 25 C
Fig.31. Typical reverse diode characteristic.
I
L = f(VBL); conditions VIG = 0 V, Tj = 25 C
Fig.32. Typical output capacitance. T
mb = 25 C
C
bl = f(VBL); conditions f = 1 MHz, VIG = 0 V
Fig.33. Typical overload characteristic, T
mb = 25 C.
I
L = f(VBL); condition VBG = 13 V; parameter tp
-60
-20
20
60
100
140
180
Tj / C
VLG / V
BUK202-50Y
-22
-20
-18
-16
-14
-12
-10
10 A
1 mA
IL =
tp = 300 us
-1.1
-0.9
-0.7
-0.5
-0.3
-0.1
VBL / V
IL / A
BUK202-50Y
-10
-20
-30
-40
-50
0
-60
-20
20
60
100
140
180
Tj / C
VBL / V
BUK202-50Y
65
60
55
50
100 uA
1 mA
4 A
IL =
tp = 300 us
0
20
40
VBL / V
Cbl
BUK202-50Y
10 nF
1 nF
100 pF
10
30
50
-20
-10
0
VBG / V
IG / mA
BUK202-50Y
0
-50
-100
-150
-15
-5
0
4
8
12
16
20
24
VBL / V
IL / A
BUK202-50Y
70
60
50
40
30
20
10
0
current limiting
i.e. before short
circuit load trip
50 us
tp =
300 us
VBL(TO) typ.
April 1995
10
Rev 1.100
相關(guān)PDF資料
PDF描述
934026490115 0.9 A, 100 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
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